Effect of the intense laser field on the valance band for Ga1-xAlxAs/GaAs heterostructure

Superlattices and Microstructures

Volumn 45, Issue 1, 2009, Pages 16-21

  Ozturk, Emine ^a   Sokmen, Ismail ^b  

^a CUMHURIYET UNIVERSITY   (Turkey)

^b DOKUZ EYLUL UNIVERSITY   (Turkey)

Author keywords

Intense laser field; Single quantum well; Valance band

Indexed keywords

ELECTRON ENERGY LEVELS; GALLIUM; LASERS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WIRES;

EFFECTIVE MASSES; ENERGY DIFFERENCES; ENERGY LEVELS; HETEROSTRUCTURE; INTENSE LASER FIELD; LASER FIELDS; POTENTIAL PROFILES; REGIONS OF INTERESTS; SINGLE QUANTUM WELL; VALANCE BAND; WELL WIDTHS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 58149196512     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.11.009     Document Type: Article

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