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Physica Status Solidi (A) Applied Research

Volumn 190, Issue 3, 2002, Pages 667-672

A dressed-atom approach to laser effects in excitons and shallow impurities in low-dimensional semiconductor heterostructures

(3) Oliveira, L E a Latge A b Brandi, H S c

a UNIVERSITY OF CAMPINAS (Brazil)

b FLUMINENSE FEDERAL UNIVERSITY (Brazil)

c FEDERAL UNIVERSITY OF RIO DE JANEIRO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; EXCITONS; INTERFACES (MATERIALS); LASER APPLICATIONS; LASER BEAM EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

KANE MODEL; LASER CONFINEMENT; RENORMALIZED MASS APPROXIMATION;

HETEROJUNCTIONS;

EID: 0036542220 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200204)190:3<667::AID-PSSA667>3.0.CO;2-W Document Type: Article

Times cited : (34)

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