SCOPUS 정보 검색 플랫폼

Journal of Optoelectronics and Advanced Materials

Volumn 10, Issue 12, 2008, Pages 3188-3192

Interference lithography using chalcogenide inorganic photoresist

(6) Indutnyy, I Z a Popescu, M b Lorinczi, A b Sava, F b Min'ko, V I a Shepeliavyi, P E a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

b NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

Author keywords

Chalcogenide inorganic photoresist; Diffraction; Interference lithography

Indexed keywords

ANISOTROPIC ETCHING; CHALCOGENIDES; DIFFRACTION; PHOTORESISTS; SILICON COMPOUNDS;

CHALCOGENIDE FILMS; INORGANIC PHOTORESISTS; INTERFERENCE LITHOGRAPHY; OBLIQUE DEPOSITION; PHOTONIC STRUCTURE; SILICON ANISOTROPIC ETCHING; TECHNOLOGICAL PROCESS; TWO-DIMENSIONAL PERIODIC STRUCTURES;

SILICON WAFERS;

EID: 58149154950 PISSN: 14544164 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (5)

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