Attempts to grow optically coupled Fibonacci-spaced InGaAs/GaAs quantum wells result in surface gratings

Optics Express

Volumn 16, Issue 26, 2008, Pages 21512-21521

  Richards, B C ^a   Hendrickson, J ^a   Sweet, J ^a   Khitrova, G ^a   Litvinov, D ^b   Gerthsen, D ^b   Myer, B ^a   Pau, S ^a   Sarid, D ^a   Wegener, M ^b   Ivchenko, E L ^c   Poddubny, A N ^c   Gibbs, H M ^a  

^a UNIVERSITY OF ARIZONA   (United States)

^b UNIVERSITY OF KARLSRUHE   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LASER BEAMS; QUANTUM WELL LASERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ABSORPTION LINE WIDTHS; FIBONACCI SEQUENCES; HEAVY HOLE EXCITONS; OPTICAL QUASICRYSTALS; SELF-ORGANIZED SURFACES; SHAPED PATTERN; SURFACE GRATING; WAVELENGTH OF LIGHT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 58149127552     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.021512     Document Type: Article

References (10)

1. K. L. Kavanagh, M. A. Capano, L. W. Hobbs, J. C. Barbour, P. M. J. Maree, W. Schaff, J. W. Mayer, D. Pettit, J. M. Woodall, J. A. Stroscio, and R. M. Feenstra, "Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers," J. Appl. Phys. 64, 4843-4852 (1988).
2. S. F. Yoon, "Surface morphology and quality of strained InGaAs grown by molecular-beam epitaxy on GaAs," J. Vac. Ssi. Technol. B 11, 562-566 (1993).
3. C. Lavoie, T. Pinnington, E. Nodwell, T. Tiedje, R. S. Goldman, K. L. Kavanagh and J. L. Hutter, "Relationship between, surface morphology and strain relaxation during growth of InGaAs strained layers, " Appl. Phys. Lett. 67, 3744-3746 (1995).
4. J. Hendrickson, B. C. Richards, J. Sweet, G. Khitrova, A. N. Poddubny, E. L. Ivchenko, M. Wegener, and H. M. Gibbs, "Excitonic polaritons in Fibonacci quasicrystals," Opt. Express 16, 15382-15387 (2008).
5. A.N. Poddubny, L. Pilozzi, M. M. Voronov, and E. L. Ivchenko, "Resonant Fibonacci quantum well structures in one dimension," Phys. Rev. B 77, 113306 (2008).
6. E. L. Ivchenko, "Excitonic polaritons in periodic quantum-well structures," Sov. Phys. Solid State 33, 13441349 (1991).
7. 0.96s/GaAs semiconductor multiple-quantum-well periodic structures," Phys. Rev. B 61, 13863-13872 (2000).
8. C. Ell, J. P. Prineas, T. R. Nelson Jr., S. Park, H. M. Gibbs, G. Khitrova, S. W. Koch, and R. Houdre, "Influence of structural disorder and light coupling on the excitonic response of semiconductor microcavities," Phys. Rev. Lett. 80, 4795 (1998).
9. J. H. Lee, Z. M. Wang, B. L. Liang, W. T. Black, V. P. Kunets, Y. I. Mazur, and G. J. Salamo, "Selective growth of InGaAs/GaAs quantum dot chains on pre-patterendGaAs(100)," Nanotechnology 17, 2275-2278 (2006).
10. A. Strecker, J. Mayer, B. Baretzky, W. Eigenthaler, T. Gemming, R. Schweinfest, and M. Rühle, "Optimization of TEM specimen preparation by double-sided ion beam thinning under low angles," J. Electron Microsc. (Tokyo) 48, 235-244 (1999).