Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films

Acta Materialia

Volumn 57, Issue 2, 2009, Pages 432-440

  Tang, Z Z ^a   Liu, S J ^a,b   Singh, R K ^a   Bandyopadhyay, S ^a   Sus, I ^a,c   Kotani, T ^a   Schilfgaarde, M van ^a   Newman, N ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b HARBIN INSTITUTE OF TECHNOLOGY   (China)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Ab initio electron theory; Ba(Zn1 3Ta2 3)O3; Optical electrical properties; Pulsed laser deposition

Indexed keywords

ACTIVATION ENERGY; BARIUM; ELECTRONIC STRUCTURE; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; GROWTH (MATERIALS); LASER THEORY; LASERS; OPTICAL PROPERTIES; OXYGEN; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; REFRACTIVE INDEX; TANTALUM; THIN FILMS; X RAY DIFFRACTION;

AB INITIO ELECTRON THEORY; BA(ZN1/3TA2/3)O3; DIELECTRIC CONSTANTS; DIELECTRIC THIN FILMS; DISSIPATION FACTORS; EXPERIMENTAL DATUMS; HIGH FIELDS; HIGH OXYGEN PRESSURES; HIGH TEMPERATURES; INTERDIGITAL CAPACITORS; OPTICAL BANDS; OPTICAL/ELECTRICAL PROPERTIES; SITE ORDERINGS; STRUCTURE CALCULATIONS; VISIBLE SPECTRAL RANGES; X-RAY DIFFRACTIONS;

ZINC;

EID: 58049194171     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2008.09.038     Document Type: Article

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