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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7428-7431

Properties of Ba(Mg1/3Ta2/3)O3 Thin Films Prepared by Pulsed-Laser Deposition

(4) Chu, Ying Hao a Lin, Su Jien a Liu, Kuo Shung a Lin, I Nan a,b

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b TAMKANG UNIVERSITY (Taiwan)

Author keywords

Ba(Mg1 3Ta2 3)O3 thin films; Dielectric properties; Evanescent microwave probe; Pulsed laser deposition

Indexed keywords

CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRIC IMPEDANCE; MICROWAVES; PERMITTIVITY; PEROVSKITE; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BA(MG1/3TA2/3)O3 THIN FILMS; EVANESCENT MICROWAVE PROBE (EMP);

BARIUM COMPOUNDS;

EID: 1242265297 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.7428 Document Type: Article

Times cited : (8)

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