Multiple transmission-reflection infrared spectroscopy for high-sensitivity measurement of molecular monolayers on silicon surfaces

Journal of Physical Chemistry A

Volumn 112, Issue 48, 2008, Pages 12372-12377

  Liu, Hong Bo ^a   Venkataraman, Nagaiyanallur V ^b   Bauert, Tobias E ^b   Textor, Marcus ^b   Xiao, Shou Jun ^a  

^a NANJING UNIVERSITY   (China)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; MOLECULAR ORIENTATION; REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; SURFACE ANALYSIS; TRANSMISSIONS;

ADSORBED MONOLAYERS; ATTENUATED TOTAL REFLECTIONS; GEOMETRIC SHAPES; HIGH QUALITIES; INFRARED SPECTRUMS; MIR SPECTROSCOPIES; MOLECULAR MONOLAYERS; MULTIPLE INTERNAL REFLECTIONS; MULTIPLE TRANSMISSIONS; OPTIMAL CONDITIONS; SENSITIVITY MEASUREMENTS; SET-UPS; SILICON CRYSTALS; SILICON SURFACES; SPECTRAL ACQUISITIONS; SPECTROSCOPIC MEASUREMENTS; THEORETICAL CALCULATIONS;

INFRARED SPECTROSCOPY;

EID: 57949115983     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp804553x     Document Type: Article

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