1.3W 1.9GHz and 1W 2.4GHz power amplifier MMIC in silicon

Electronics Letters

Volumn 32, Issue 19, 1996, Pages 1827-1829

  Simburger W ^a   Trost, H P ^a   Wohlmuth, H D ^a   Knapp, H ^a   Weger, P ^a  

^a SIEMENS AG   (Germany)

Author keywords

Microwave power amplifiers; MMIC; Silicon

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; MOBILE TELECOMMUNICATION SYSTEMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RADIO COMMUNICATION; SEMICONDUCTING SILICON;

MICROWAVE POWER AMPLIFIER; POWER ADDED EFFICIENCY; SILICON BIPOLAR PRODUCTION TECHNOLOGY;

POWER AMPLIFIERS;

EID: 0030246650     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961193     Document Type: Article

References (5)

1. WONG, S.L., BHIMNATHWALA, H., LUO, S., HALALI, B., and NAVID, S.: 'A 1 W 830MHz monolithic BICMOS power amplifier'. IEEE Int. Solid-State Circuits Conf., February 1996, Paper TP 3.3, pp. 52-54
2. SOWLATI, T., SALAMA, C., ANDRE, T., SITCH, J., RABJOHN, G., and SMITH, D.: 'Low voltage, high efficiency GaAs class E power amplifiers for wireless transmitters', IEEE J. Solid-State Circuits, 1995, 30, pp. 1074-1080
3. WONG, S.L., BHIMNATHWALA, H., LUO, S., HALALI, B., and NAVID, S.: 'A 1.9GHz-band ultra low power consumption amplifier chip set for personal communications'. IEEE MTT-S Dig., 1995, pp. 9-12
4. LIPPERER, G.: 'Nur 3 V Betriebsspannung für Leistungs-MMIC-Bausteine in GaAs-Technik', ntz, 1995, 48, (7), pp. 8-10
5. SOKAL, N.O., and SOKAL, A.D.: 'Class E - A new class of high-efficiency tuned single-ended switching power amplifiers', IEEE J. Solid-State Circuits, 1975, 10, pp. 168-176