Chemically sensitive Field Effect Transistors of oxide-free silicon Nanowires - Towards detection of volatile biomarkers of cancer

IEEE International Symposium on Industrial Electronics

Volumn , Issue , 2008, Pages 2040-2044

  Assad, Ossama ^a   Haick, Hossam ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ARTIFICIAL ORGANS; ELECTRIC WIRE; ELECTRONIC EQUIPMENT; FIELD EFFECT TRANSISTORS; INDUSTRIAL ELECTRONICS; LEAD; LEAD COMPOUNDS; MESFET DEVICES; NANOWIRES; SILICON; SILICON COMPOUNDS; TRANSISTORS;

BACK GATE VOLTAGES; CONCENTRATION LEVELS; ELECTRONIC NOSES; FREE SILICONS; INTERFACE TRAPS; PRIOR WORKS; SENSITIVE DETECTIONS; SI NANOWIRES;

CHEMICALLY SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 57849103944     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISIE.2008.4676961     Document Type: Conference Paper

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18. The different termination functionalities were designed intentionally to cover the different adsorption possibilities of the wide variety of (1ung) cancer biomarkers.