Modeling and analysis of parasitic resistance in double gate FinFETs

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2008, Pages 51-52

  Tekleab, D ^a,b   Zeitzof, P ^a,b  

^a IBM RESEARCH   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Contact resistance; Double gate; FinFET; Series resistance; SOI; Transmission line model

Indexed keywords

DOUBLE GATE; FINFET; SERIES RESISTANCE; SOI; TRANSMISSION LINE MODEL;

BOUNDARY VALUE PROBLEMS; CONTACT RESISTANCE; ELECTRIC LINES; ELECTRIC RESISTANCE; ELECTROMAGNETIC WAVE EMISSION; FIELD EFFECT TRANSISTORS; POWER TRANSMISSION; TRANSMISSION LINE THEORY;

THREE DIMENSIONAL;

EID: 57749204576     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2008.4656289     Document Type: Conference Paper

References (7)

1. Wen Wu and Mansum Chan, Analysis of Geometry-Dependent Parasitics in Multifin Double-Gate Fin.FETs, TED, Vol. 54, No. 4, pp. 692-698,2007.
2. Abhisek Dixit, et al., "Analysis of the Parasitic S/D Resistance in Multiple-Gate FETs", IEEE Trans. ED., vol. 52, no. 6, pp. 1132-1140, 2005
3. Hasanur R. Khan, et. al, TED, Vol. 55, No. 3, pp. 743-753, 2008.
4. G. Baccarani and G. A. Sai-Halasz, "Spreading resistance in submicron MOSFETs", IEEE Electrin Device Lett. 4, no.2, pp. 27-29, 1983.
5. H. H. Berger, "Contact Resistance on Diffused Resistors" in Proc. ISSCC, 1969, pp. 162-163.
6. 3D Contact Resistance Model for 3D devices. (To be submitted for publication)
7. ITRS, 2007. [Online]. Available: http://www.itrs.net/reports.html