Surface states on the n-InN-electrolyte interface

Semiconductors

Volumn 42, Issue 12, 2008, Pages 1416-1419

  Gutkin, A A ^a   Rudinsky, M E ^a   Brunkov, P N ^a   Klochikhin, A A ^a,b   Davydov, V Yu ^a   Chen, H Y ^c   Gwo, S ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETERSBURG NUCLEAR PHYSICS INSTITUTE   (Russian Federation)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 57749191904     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782608120087     Document Type: Article

References (13)

1. T. D. Veal I. Mahbood L. F. J. Piper 2004 J. Vac. Sci. Technol. B 22 2175
2. Leyla Colakerol, T. D. Veal, Hae-Kyung Jeong, et al. Phys. Rev. Lett. 97, 237601 (2006).
3. J. W. L. Yim, R. E. Jones, K. M. Yu, et al., Phys. Rev. B 76, 041303(R) (2007).
4. S. R. Morrison, Electrochemistry at Semiconductor and Oxidized Metal Electrodes (Plenum Press, New York, London, 1980).
5. X. Wang, S.-B. Che, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Lett. 91, 242111 (2007).
6. E. H. Nicollian A. Goetzberger 1967 Bell Syst. Techn. J. 46 1055
7. S. Gwo C.-L. Wu C.-H. Shen 2004 Appl. Phys. Lett. 84 3765
8. A. A. Klochikhin V. Yu. Davydov I. Yu. Strashkova 2007 Phys. Stat. Solidi (RRL) 1 159
9. P. N. Brunkov T. Benyattou G. Guillot 1996 J. Appl. Phys. 80 864
10. P. N. Brunkov A. A. Suvorova N. A. Bert 1998 Fiz. Tekh. Poluprovodn. 32 1229 [Semiconductors 32, 1096 (1998)]
11. A. A. Klochikhin, V. Yu. Davydov, I. Yu. Strashkova, and S. Gwo, Phys. Rev. B 76, 235325 (2007).
12. T. D. Veal L. F. J. Piper M. R. Phillips 2006 Phys. Status Solidi A 203 85
13. C. G. Van deWalle and D. Segev, J. Appl. Phys. 101, 081704 (2007).