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Volumn 311, Issue 1, 2008, Pages 114-117

Single crystal growth of LaCuOS by the flux method

Author keywords

A1. Layered structure; A2. Flux method; A2. Single crystal; B1. Oxysulfide; B2. Transparent semiconductor

Indexed keywords

COOLING; COPPER; CRYSTAL GROWTH; CRYSTALLIZATION; CRYSTALS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; GROWTH (MATERIALS); SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SILICA; SODIUM CHLORIDE; TUBES (COMPONENTS);

EID: 57649217428     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.050     Document Type: Article
Times cited : (18)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.