|
Volumn 311, Issue 1, 2008, Pages 114-117
|
Single crystal growth of LaCuOS by the flux method
|
Author keywords
A1. Layered structure; A2. Flux method; A2. Single crystal; B1. Oxysulfide; B2. Transparent semiconductor
|
Indexed keywords
COOLING;
COPPER;
CRYSTAL GROWTH;
CRYSTALLIZATION;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
GRAIN BOUNDARIES;
GROWTH (MATERIALS);
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR MATERIALS;
SILICA;
SODIUM CHLORIDE;
TUBES (COMPONENTS);
A1. LAYERED STRUCTURE;
A2. FLUX METHOD;
A2. SINGLE CRYSTAL;
B1. OXYSULFIDE;
B2. TRANSPARENT SEMICONDUCTOR;
SINGLE CRYSTALS;
|
EID: 57649217428
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.10.050 Document Type: Article |
Times cited : (18)
|
References (21)
|