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Journal of Electronic Materials

Volumn 38, Issue 1, 2009, Pages 119-125

Optical characteristics of ZnTeO thin films synthesized by pulsed laser deposition and molecular beam epitaxy

(5) Wang, W a Bowen, W a Spanninga, S a Lin, S a Phillips, J a

a UNIVERSITY OF MICHIGAN (United States)

Author keywords

Absorption coefficient; Defect level; Diluted alloy; ZnTeO

Indexed keywords

BAND EDGES; DEFECT LEVEL; DILUTE ALLOYS; DILUTED ALLOY; ELECTRONIC BANDS; EPITAXIAL STRUCTURES; HIGH DENSITIES; HIGH PARTIAL PRESSURES; OPTICAL ABSORPTIONS; OPTICAL CHARACTERISTICS; OXYGEN INCORPORATIONS; PULSED LASERS; RADIATIVE PROPERTIES; X-RAY PHOTOELECTRON SPECTROSCOPIES; ZNTEO;

ABSORPTION; ALLOYS; CERIUM ALLOYS; CRYSTAL GROWTH; DEFECT DENSITY; EPITAXIAL FILMS; LASERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR OXYGEN; MOLECULAR SPECTROSCOPY; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; THIN FILMS; ZINC COMPOUNDS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 57649149307 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-008-0577-2 Document Type: Conference Paper

Times cited : (45)

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