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Volumn 93, Issue 23, 2008, Pages

Effects of artificially structured micrometer holes on the transport behavior of Al-doped ZnO layers

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MAGNETRON SPUTTERING; SEMICONDUCTING ZINC COMPOUNDS; THICKNESS MEASUREMENT; TRANSPORT PROPERTIES; ZINC OXIDE;

EID: 57649120769     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3040312     Document Type: Article
Times cited : (18)

References (15)
  • 14
    • 15344350485 scopus 로고
    • 0163-1829 10.1103/PhysRevB.28.2914.
    • G. Bergmann, Phys. Rev. B 0163-1829 10.1103/PhysRevB.28.2914 28, 2914 (1983).
    • (1983) Phys. Rev. B , vol.28 , pp. 2914
    • Bergmann, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.