The effects of monolayer thickness and sheet doping density on dark current and noise current in quantum dot infrared photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6740, Issue , 2007, Pages

  Tan, Chee Hing ^a   Mun, Souye C Liew Tat ^a   Vines, Peter ^a   David, John P R ^a   Hopkinson, Mark ^a   Wilson, Luke ^a   Aivaliotis, Pantelis ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Monolayer; Noise gain; QDIP; Sheet doping density

Indexed keywords

INFRARED DETECTORS; OPTICAL MATERIALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

DOT DENSITIES; MONOLAYER THICKNESS; NOISE CURRENTS; NOISE GAIN; QDIP; QUANTUM DOT INFRARED PHOTODETECTORS; QUANTUM DOT LAYERS; SHEET DOPING DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 57549111037     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.740701     Document Type: Conference Paper

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