Source-drain series resistance: The real limiter to mosfet scaling

Proceedings - Electrochemical Society

Volumn 1, Issue , 2004, Pages 412-419

  Thompson, Scott E ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET SCALING; NANOSCALE TRANSISTORS; SERIES RESISTANCE;

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ENERGY UTILIZATION; INFORMATION TECHNOLOGY; MICROPROCESSOR CHIPS; PROJECT MANAGEMENT; SILICON;

MOSFET DEVICES;

EID: 5744253957     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

1. G. Moore, Electron. 38, (1965) 114.
2. G. Moore, IEDM Tech. Dig.,(1915) 11.
3. S. Thompson et al., submitted to ED.
4. G. Moore, ISSCC Digest of Technical Papers, (2003) 1.
5. S. Thompson, P. Packan, M. Bohr, Intel Technology Journal Q3'98,. (1998).
6. S. Thompson et al., IEDM Tech. Dig., (2002) 61.
7. T. Ghani et al., IEDM Tech. Dig., (2003) 978.
8. S. Thompson submitted to EDL.
9. A. Steeger, M. Stucchi, A. Lauwers, and K. Maex, IEDM Tech Dig., (1999) 497.
10. S. Ito et al.," IEDM Tech. Dig., (2000) 247.
11. J. Welser, J. L. Hoyt, and J. F. Gibbons, IEDM Technical Digest, (1992) 1000.
12. E. Fitzgerald, Y. Xie, M. Green, D. Brasen, A. Kortan, J. Michel, Y. Miii, B. Weir, Appl. Phys. Lett. 59, (1991) 811.
13. M. Ozturk, N. Pesovic, I. Kang, J. Liu,. H. Mo, S. Gannavaram, International Workshop on Junction Technology, (2001) 77.
14. S. Gannavaram, N. Pesovic, and M. C. Ozturk, IEDM Tech. Digest, pp. 437-440, 2000.
15. M.C. Ozturk et al., IEDM Tech. Digest, pp. 375-378, 2002.