Laser anneal technology for poly-silicon dopant activation enhancement

Proceedings - Electrochemical Society

Volumn 1, Issue , 2004, Pages 230-235

  Ma, Y ^a   Ahmed, K Z ^a   Cunningham, K L ^a   Olsen, C S ^a   Leung, T Y B ^a   Mcintosh, R C ^a   Mayur, A J ^a   Liang, H ^a   Yam, M ^a   Castle, M ^a   Muthukrishnan, S ^a   Liu, P M ^a   Foad, M ^a   Miner, G E ^a   Higashi, G S ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT ACTIVATION; DOPANT DIFFUSION; LASER ANNEALING; POLY DEPLETION;

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; ELECTRODES; LASER BEAM EFFECTS; MELTING; THERMAL EFFECTS;

POLYSILICON;

EID: 5744225769     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Y. Taur, IEDM Tech. Dig., (1998) 789
2. K. Suzuki, A. Satoh, T. Aoyama, I. Namura, F. Inoue, J. Electrochem. Soc, 142 (1995) 2786
3. C. P. Wu, and C. W. Magee, Appl. Phys. Lett., 34, (1979) 737.
4. A. Kamgar, H. M. Vaidya, F. H. Baumann, and S. Nakahara, IEEE EDL, 23, (2001) 22
5. I. Debusschere, L. Deferm, and W. Vandervorst, J. Vac. Sci. Technol., B14 (1996) 265.
6. Y. F. Chong, H. J. L. Gossman, M. O. Thompson, K. L. Pey, A. T. S. Wee, S. Talwar, and L. Chan, IEEE EDL, 24, (2003) 360.