Importance of determining the polysilicon dopant profile during process development

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 265-271

  Debusschere, I ^a   Deferm, L ^a   Vandervorst, W ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243125654     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588459     Document Type: Article

References (11)

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