Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz-1 MHz

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 12, 2008, Pages 3597-3600

  Theodoropoulou, M ^a   Pagonis, D N ^a   Nassiopoulou, A G ^a   Krontiras, C A ^b   Georga, S N ^b  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b UNIVERSITY OF PATRAS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIZATION; APPLIED VOLTAGES; CONDUCTION MECHANISMS; DIELECTRIC CHARACTERISTICS; DIELECTRIC CHARACTERIZATIONS; DIELECTRIC CONSTANTS; ETHANOL SOLUTIONS; EXCITED ELECTRONS; EXPERIMENTAL DATUMS; FREQUENCY RANGES; HIGH TEMPERATURES; LOW TEMPERATURES; MACROPOROUS; MACROPOROUS SILICONS; METALLIZATION; OXIDIZED SAMPLES; PORE WALLS; RF ISOLATIONS; ROOM TEMPERATURES; SILICON SUBSTRATES; STATIC DIELECTRIC CONSTANTS; TEMPERATURE RANGES; THEORETICAL MODELS; THERMAL OXIDATIONS; THICK LAYERS; THICK SILICON FILMS; TIME INTERVALS; TRANSIENT CURRENTS; VEGARD'S LAWS;

ATOMS; CERAMIC CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIELECTRIC SPECTROSCOPY; DIELECTRIC WAVEGUIDES; ELECTRIC CURRENT MEASUREMENT; ETHANOL; EXPERIMENTS; HEAT CONDUCTION; HYDROFLUORIC ACID; MOS CAPACITORS; NANOELECTRONICS; NANOTECHNOLOGY; NONMETALS; PERMITTIVITY; POROUS SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SUBSTRATES;

DIELECTRIC MATERIALS;

EID: 57349171306     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200780153     Document Type: Conference Paper

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