A novel 2-12GHz 14 dBm high efficiency power distributed amplifier for ultra-wideband-applications using a low-cost SiGe BiCMOS technology

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 1123-1126

  Sewiolo, Benjamin ^a   Weigel, Robert ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Capacitively coupled; Distributed amplifiers; Heterojunction bipolar transistors; Power amplifiers; SiGe BiCMOS integrated circuits; Spiral inductors; Tapered; Ultra wideband

Indexed keywords

AMPLIFIERS (ELECTRONIC); BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; COST BENEFIT ANALYSIS; COUPLED CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; MICROWAVES; NETWORKS (CIRCUITS); POWER AMPLIFIERS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SILICON ALLOYS; TRANSISTORS; WIRELESS TELECOMMUNICATION SYSTEMS;

CAPACITIVELY COUPLED; DISTRIBUTED AMPLIFIERS; SIGE BICMOS INTEGRATED CIRCUITS; SPIRAL INDUCTORS; TAPERED; ULTRA-WIDEBAND;

BROADBAND AMPLIFIERS;

EID: 57349146319     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4633254     Document Type: Conference Paper

References (12)

1. M. Rossberg, J. Sachs, P. Rauschenbach, P. Peyerl, K. Pressel, W. Winkler, and D. Knoll, "11 GHz SiGe Circuits for Ultra Wideband Radar," in Bipolar/BiCMOS Circuits and Technology Meeting, Sept. 2000, pp. 70-73.
2. G. A. Lee, K. Hyunseok, and F. D. Flaviis, "Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology," Microwave Symposium Digest., 2003 IEEE MTT-S International, vol. 1, pp. 189-192, June 2003.
3. M.-D. Tsai, K.-Y. Lin, and H. Wang, "A 5.4-mW LNA using 0.35 μm SiGe BiCMOS technology for 3.1-10.6GHz UWB wireless receivers," in Radio Frequency Integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE, June 2005, pp. 335-338.
4. S. Jose, H.-J. Lee, and D. Ha, "A Low-Power CMOS Power Amplifier for Ultra Wideband (UWB) Applications," in IEEE International Symposium on Circuits and Systems, vol. 5, May 2005, pp. 5111-5114.
5. C. Grewing, K. Winterberg, S. van Waasen, M. Friedrich, G. L. Puma, A. Wiesbauer, and C. Sandner, "Fully Integrated Distributed Power Amplifier in CMOS Technology, Optimized for UWB Transmitters," Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE, pp. 87-90, June 2004.
6. J. P. Fraysse, J. P. Viaud, and P. Q. R. Campovecchio, M. Auxemery, "A 2W, High Efficiency, 2-8 GHz, Cas-code HBT MMIC Power Distributed Amplifier," Microwave Symposium Digest, 2000 IEEE MTT-S International, vol. 1, pp. 529 - 532, June 2000.
7. J. Shohat, I. D. Robertson, and S. J. Nightingale, "High Efficiency 10 Gb/s Optical Modulator Driver Amplifier Using A Power pHEMT Technology," Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European, pp. 129-132, 2005.
8. B. Campovecchio and B. Le Bras and M. Lajugie and J. Obregon, "Optimum Design of Distributed Power-FET Amplifiers. Application to a 2-18 GHz MMIC Module Exhibiting Improved Power Performances," Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994, pp. 125-128, May 1994.
9. J. B. Beyer, S. N. Prasad, R. C. Becker, J. E. Nordman, and G. K. Hohenwarter, "MESFET Distributed Amplifier Design Guidelines," IEEE Trans. Microwave Theory Tech., vol. 32, pp. 268-275, Mar. 1984.
10. T. Wong, Fundamentals of Distributed Amplification. Norwood, MA, USA: Artech House, Inc., Oct. 1993.
11. S. C. Cripps, RF Power Amplifiers for Wireless Communications. Norwood, MA, USA: Artech House, Inc., 1999.
12. P. N. Shastry and A. S. Ibrahim, "Design Guidelines for a Novel Tapered Drain Line Distributed Power Amplifier," Microwave Conference, 2006. 36th European, pp. 1274-1277, Sept. 2006.