Atomic-scale configuration of catalyst particles on GaN nanowires

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 12, 2008, Pages 3716-3719

  Kehagias, Th ^a   Komninou, Ph ^a   Dimitrakopulos, G P ^a   Cheze C ^b,c   Geelhaar, L ^b,c   Riechert, H ^b,c   Karakostas, Th ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^c NaMLab   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL METHODS; BASAL STACKING FAULTS; CATALYST PARTICLES; CRYSTAL QUALITIES; CUBIC OXIDES; DENSE NETWORKS; GAN NANOWIRES; GROWTH REGIMES; LATTICE SPACINGS; MISFIT DISLOCATIONS; OXIDE LATTICES; RADIAL GROWTHS; SOLID GROWTHS; STRUCTURAL DEFECTS;

ATOMIC PHYSICS; ATOMS; CATALYSIS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH (MATERIALS); HETEROJUNCTIONS; LANTHANUM COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOELECTRONICS; NANOTECHNOLOGY; NANOWIRES; NICKEL ALLOYS; SEMICONDUCTING GALLIUM; STACKING FAULTS;

EPITAXIAL GROWTH;

EID: 57349138302     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200780135     Document Type: Conference Paper

References (16)

1. Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, and H. Yan, Adv. Mater. 15, 353 (2003).
2. D.J. Sirbuly, M. Law, H. Yan, and P. Yang, J. Phys. Chem. 109, 15190 (2005).
3. A.B. Greytak, C.J. Barrelet, Y. Li, and C.M. Lieber, Appl. Phys. Lett. 87, 151103 (2005).
4. H.Y. Cha, H.Q. Wu, M. Chandrashekhar, Y.C. Choi, S. Chae, G. Koley, and M.G. Spencer, Nanotechnology 17, 1264 (2006).
5. P.J. Pauzauskie, D.J. Sirbuly, and P.D. Yang, Phys. Rev. Lett. 96, 143903 (2006).
6. G. Seryogin, I. Shalish, W. Moberlychan, and V. Narayanamurti, Nanotechnology 16, 2342 (2005).
7. G. Kipshidze, B. Yavich, A. Chandolu, J. Yun, V. Kuryatkov, I. Ahmad, D. Aurongzeb, M. Holtz, and H. Temkin, Appl. Phys. Lett. 86, 033104 (2005).
8. K.A. Bertnessa, A. Roshkoa, N. A. Sanforda, J.M. Barkera, and A.V. Davydov, J. Cryst. Growth 287, 522 (2006).
9. K. A. Dick, K. Deppert, T. Mårtensson, B. Mandl, L. Samuelson, and W. Seifert, Nano Lett. 5, 761 (2005).
10. B.T. Park and K. Yong, Nanotechnology 15, S365 (2004).
11. L. Geelhaar, C. Chèze, W.M. Weber, R. Averbeck, H. Riechert, Th. Kehagias, Ph. Komninou, G.P. Dimitrakopulos, and Th. Karakostas, Appl. Phys. Lett. 91, 093113 (2007).
12. X. Chen, J. Li, Y. CaO, Y. Lan, H. Li, M. He, C. Wang, Z. Zhang, and Z. Qiao, Adv. Mater. 12, 1432 (2000).
13. S.C. Lyu, Y. Zhang, H. Ruh, H.-J. Lee, H.-W. Shim, E.-K. Suh, and C.J. Lee, Chem. Phys. Lett. 363, 134 (2002).
14. Th. Kehagias, Ph. Komninou, G. Nouet, P. Ruterana, and Th. Karakostas, Phys. Rev. B 64, 195329 (2000).
15. J.F. Nye, Acta Metall, 1, 153 (1953).
16. M.J. Hytch, E. Snoeck, and R. Kilaas, Ultramicroscopy 74, 131 (1998).