Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate

Electronics Letters

Volumn 44, Issue 25, 2008, Pages 1469-1470

  Wilcox, K G ^a   Mihoubi, Z ^a   Elsmere, S ^a   Quarterman, A ^d   Foreman, H D ^b   Hashimoto, S ^c   Sudmeyer T ^c   Keller, U ^c   Tropper, A ^d  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b Engineering and Physical Sciences Research Council UK   (United Kingdom)

^c ETH ZURICH   (Switzerland)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; FIBER LASERS; LASERS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SURFACE EMITTING LASERS;

CAVITY SURFACES; EXTERNAL-; PASSIVELY MODE LOCKED; PS PULSES; REPETITION RATES; SEMICONDUCTOR SATURABLE ABSORBERS; TEMPORAL ABSORPTIONS; TIME CONSTANTS;

PULSED LASER APPLICATIONS;

EID: 57349136367     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20089345     Document Type: Article

References (7)

1. Tropper, A.C., Foreman, H.D., Garnache, A., Wilcox, K.G., and Hoogland, S.H.: ' Vertical-external-cavity semiconductor lasers ', J. Phys. D Appl. Phys., 2004, 37, p. R75-R85 0022-3727
2. Wilcox, K.G., Mihoubi, Z., Daniell, G.J., Ellsmere, S., Quarterman, A., Farrer, I., Ritchie, D.A., and Tropper, A.: ' Ultrafast optical stark mode-locked semiconductor laser ', Opt. Lett., 2008, 33, (23), p. 2797-2799 0146-9592
3. Lorenser, D., Maas, D.J.H.C., Unold, H.J., Bellancourt, A.R., Rudin, B., Gini, E., Ebling, D., and Keller, U.: ' 50-GHz passively modelocked surface-emitting semiconductor laser with 100-mW average output power ', IEEE J. Quantum Electron., 2006, 42, (16), p. 838-847 10.1109/JQE.2006.878183 0018-9197
4. Lindberg, H., Sadeghi, M., Westlund, M., Wang, S.M., Larsson, A., Strassner, M., and Marcinkevicius, S.: ' Mode locking a 1550nm semiconductor disk laser by using a GaInNAs saturable absorber ', Opt. Lett., 2005, 30, p. 2793-2795 10.1364/OL.30.002793 0146-9592
5. Rutz, A., Liverini, V., Maas, D.J.H.C., Rudin, B., Bellancourt, A.R., Schon, S., and Keller, U.: ' Passively modelocked GaInNAs VECSEL at centre wavelength around 1.3m ', Electron. Lett., 2006, 42, (16), p. 926-928 10.1049/el:20061793 0013-5194
6. Holm, M.A., Cusumano, P., Burns, D., Ferguson, A.I., and Dawson, M.D.: ' Mode-locked operation of a diode-pumped, external-cavity GaAs/ALGaAs surface emitting laser ', Conf on Lasers and Electro-Optics, 1999
7. Hastie, J.E., Hopkins, J.M., Calvez, S., Jeon, C.W., Burns, D., Abram, R., Riis, E., Ferguson, A.I., and Dawson, M.D.: ' 0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser ', IEEE Photonics Technol. Lett., 2003, 15, p. 894-896 10.1109/LPT.2003.813446 1041-1135