High sensitivity ultraviolet PIN photodiodes of ZnSSe n+-i-p structure / p+-GaAs with an extremely thin n+-window layer grown by using MBE

Journal of the Korean Physical Society

Volumn 53, Issue 5 PART 2, 2008, Pages 2925-2928

  Miki, K ^a   Oshita, Y ^a   Katada, D ^a   Nobe, K ^a   Nomura, M ^a   Abe, T ^a   Kasada, H ^a   Ando, K ^a   Adachi, M ^b  

^a TOTTORI UNIVERSITY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Blue ultraviolet ZnSSe PIN photodiode; High donor doping in MBE; Super lattice buffer

Indexed keywords

EID: 57349111416     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.2925     Document Type: Conference Paper

References (7)

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