Growth and dielectric properties of Ta2O5 single crystals grown by laser heated pedestal growth technique

Zhongguo Jiguang/Chinese Journal of Lasers

Volumn 35, Issue 11, 2008, Pages 1710-1712

  Jiang, Yijian ^a   Guo, Ruyan ^b   Bhalla, A S ^b  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Dielectric properties; Laser heated pedestal growth (LHPG); Materials; Single crystals; Ta2O5

Indexed keywords

CERAMIC CAPACITORS; CRYSTAL SYMMETRY; CRYSTALLOGRAPHY; CRYSTALS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; GROWTH (MATERIALS); LASERS; MATERIALS PROPERTIES; PERMITTIVITY; TANTALUM; THERMAL EXPANSION; THERMAL SPRAYING; X RAY DIFFRACTION ANALYSIS;

DIELECTRIC ANISOTROPIES; DIELECTRIC ENHANCEMENTS; DIELECTRIC MEASUREMENTS; DIELECTRIC PERMITTIVITIES; LOSS TANGENTS; PEDESTAL GROWTHS; TA2O5; TEMPERATURE RANGES; X-RAY DIFFRACTIONS;

SINGLE CRYSTALS;

EID: 57249106686     PISSN: 02587025     EISSN: None     Source Type: Journal    
DOI: 10.3788/CJL20083511.1710     Document Type: Article

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