(Ta2O5)0.92(TiO2)0.08thin films prepared by pulsed laser deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4086, Issue , 2000, Pages 679-682

  Jiang, Yijian ^a   Zhang, Li ^a   Zou, Deshu ^a   Zuo, Tiechuan ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

(Ta205)0 9208 thin film; Dielectric constant; Pulsed laser deposition; Substrate temperature

Indexed keywords

HIGH-K DIELECTRIC; OXIDE MINERALS; PULSED LASER DEPOSITION; PULSED LASERS; TANTALUM OXIDES; TITANIUM DIOXIDE;

DEPOSITION TEMPERATURES; GAS ENVIRONMENT; OXYGEN PRESSURE; POLYCRYSTALLINE THIN FILM; R-EQUAL; SI SUBSTRATES; STRUCTURE AND PROPERTIES; SUBSTRATE-TARGET DISTANCES;

THIN FILMS;

EID: 57249096752     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.408352     Document Type: Conference Paper

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