A frequency- and space-domain series-expansion approach for efficient numerical modeling of semiconductor devices

IEEE Transactions on Electron Devices

Volumn 55, Issue 12, 2008, Pages 3525-3531

  Leuzzi, Giorgio ^a   Stornelli, Vicenzo ^a  

^a UNIVERSITY OF L'AQUILA   (Italy)

Author keywords

Electron device modeling; Frequency domain analysis; Physics based analysis; Polynomial expansion

Indexed keywords

BOLTZMANN EQUATION; DEMODULATION; ELECTRIC CONDUCTIVITY; EXPANSION; FLUID DYNAMICS; FOURIER ANALYSIS; FOURIER SERIES; HARMONIC ANALYSIS; MODELS; POLYNOMIAL APPROXIMATION; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS;

ACTIVE DEVICES; BOLTZMANN'S TRANSPORT EQUATIONS; COMPUTATIONAL BURDENS; DEVICE CHANNELS; DIELECTRIC CONSTANTS; DO-MAINS; DOMAIN TECHNIQUES; ELECTRON DENSITIES; ELECTROSTATIC POTENTIALS; FINITE DIFFERENCE TIME DOMAINS; FOURIER; FREQUENCY TRANSFORMS; HARMONIC BALANCES; HIGH FREQUENCIES; NUMERICAL MODELING; PHYSICAL QUANTITIES; PHYSICAL SIMULATORS; PHYSICAL TRANSPORTS; PHYSICS-BASED ANALYSIS; POLYNOMIAL EXPANSION; POLYNOMIAL EXPANSIONS; SEMI-CONDUCTORS; SPACE SAMPLINGS; SPECTRAL SOLUTIONS; VERY HIGH FREQUENCIES;

FREQUENCY DOMAIN ANALYSIS;

EID: 57149128206     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2006740     Document Type: Article

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