|
|
Volumn 36, Issue 3 B, 1997, Pages
|
|
Capacitance anomaly in the negative differential resistance region of resonant tunneling diodes
a
a
NTT CORPORATION
(Japan)
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CAPACITANCE;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC VARIABLES MEASUREMENT;
ELECTRONIC DENSITY OF STATES;
MOLECULAR BEAM EPITAXY;
NEGATIVE RESISTANCE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
CAPACITANCE ANOMALY;
CAPACITANCE VOLTAGE DENSITY;
ELECTRON LIFETIME;
ELECTRON SHEET DENSITY;
NEGATIVE DIFFERENTIAL RESISTANCE;
RESONANT TUNNELING DIODES;
TUNNEL DIODES;
|
|
EID: 0031098778
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.l330 Document Type: Article |
|
Times cited : (34)
|
|
References (14)
|
