Low-temperature STM/STS studies on boron-doped (1 1 1) diamond films

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 12, 2008, Pages 3027-3030

  Nishizaki, Terukazu ^a   Takano, Yoshihiko ^b   Nagao, Masanori ^b   Takenouchi, Tomohiro ^c   Kawarada, Hiroshi ^c   Kobayashi, Norio ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

A. Superconductors; C. Scanning tunnelling microscopy (STM); D. Electronic structure

Indexed keywords

ATOMIC SPECTROSCOPY; BORON; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; EPITAXIAL FILMS; SCANNING; SCANNING TUNNELING MICROSCOPY; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY; TUNNELING (EXCAVATION);

A. SUPERCONDUCTORS; BORON ATOMS; C. SCANNING TUNNELLING MICROSCOPY (STM); D. ELECTRONIC STRUCTURE; DOPED DIAMONDS; HIGH TEMPERATURES; INHOMOGENEOUS DISTRIBUTIONS; SPATIAL DEPENDENCES; SPATIAL VARIATIONS; STM/STS; SUPERCONDUCTING ENERGY GAPS; SUPERCONDUCTING PROPERTIES; TEMPERATURE REGIONS; TUNNELING CONDUCTANCE SPECTRUMS; TUNNELING SPECTRUMS;

DIAMOND FILMS;

EID: 57049116970     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2008.06.011     Document Type: Article

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