Nanometric size effect on Ge diffusion in polycrystalline Si

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Portavoce, A ^a,b   Chai, G ^c   Chow, L ^c   Bernardini, J ^a,b  

^a AIX MARSEILLE UNIVERSITY   (France)

^b CNRS   (France)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; DIFFUSION; GERMANIUM; GRAIN BOUNDARIES; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTOR DOPING; SILICON;

CONVENTIONAL ANALYTICAL; FICK'S EQUATIONS; FISHER MODELS; GE DIFFUSIONS; MICRO GRAINS; MICROCRYSTALLINE SI; NANO GRAINS; NANO-SIZE EFFECTS; NANOCRYSTALLINE SI; NANOGRAIN BOUNDARIES; NANOMETRIC SIZES; POLYCRYSTALLINE SI;

MICROCRYSTALLINE SILICON;

EID: 57049110397     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3010297     Document Type: Article

References (39)

1. C. E. Allen, D. L. Beke, H. Bracht, C. M. Bruff, M. B. Dutt, G. Erd́lyi, P. Gas, F. M. d'Heurle, G. E. Murch, E. G. Seebauer, B. L. Sharma, and N. A. Stolwijk, Diffusion in Semiconductors and Non-Metallic Solids, Landolt-Börnstein-Numerical Data and Functional Relationships in Science and Technology, edited by, D. Beke, (Springer-Verlag, Berlin, 1998), Vol. 33, Pt. A.
2. J. C. Fisher, J. Appl. Phys. 0021-8979 10.1063/1.1699825 22, 74 (1951).
3. I. Kaur, Y. Mishin, and W. Gust, Fundamentals of Grain and Interphase Boundary Diffusion (Wiley, Chichester, 1995).
4. Y. Mishin, C. Herzig, J. Bernardini, and W. Gust, Int. Mater. Rev. 42, 155 (1997). 0950-6608
5. M. Koppers, Y. Mishin, and C. Herzig, Acta Metall. Mater. 0956-7151 10.1016/0956-7151(94)90227-5 42, 2859 (1994).
6. J. Bernardini, C. Girardeaux, and A. Rolland, Interface Sci. 11, 33 (2003). 0927-7056
7. S. G. Srinivasan, J. W. Cahn, H. Jónsson, and G. Kalonji, Acta Mater. 1359-6454 10.1016/S1359-6454(99)00120-2 47, 2821 (1999).
8. I. A. Ovid'ko and A. G. Sheinerman, Rev. Adv. Mater. Sci. 6, 41 (2004).
9. Nanodiffusion-Diffusion in Nanostructured Materials, Special Issue J. Metastable Nanocryst. Mater., edited by, D. L. Beke, (Trans Tech Publications, 2004), Vol. 19.
10. D. L. Beke and Z. Erd́lyi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.73.035426 73, 035426 (2006).
11. Y. Chen and C. A. Schuh, Acta Mater. 1359-6454 10.1016/j.actamat.2006.06. 011 54, 4709 (2006).
12. J. Bernardini, C. Girardeaux, Z. Erdelyi, and C. Lexcellent, J. Metastable Nanocryst. Mater. 19, 35 (2004).
13. W. P. Tong, N. R. Tao, Z. B. Wang, J. Lu, and K. Lu, Science 0036-8075 10.1126/science.1080216 299, 686 (2003).
14. Z. Erdelyi, M. Sladecek, L. M. Stadler, I. Zizak, G. A. Langer, M. K. Varga, D. Beke, and B. Sepiol, Science 0036-8075 10.1126/science.1104400 306, 1913 (2004).
15. Z. Balogh, Z. Erd́lyi, D. L. Beke, G. A. Langer, A. Csik, H. -G. Boyen, U. Wiedwald, P. Ziemann, A. Portavoce, and C. Girardeaux, Appl. Phys. Lett. 0003-6951 10.1063/1.2908220 92, 143104 (2008).
16. B. Bokstein, V. Ivanov, O. Oreshina, A. Peteline, and S. Peteline, Mater. Sci. Eng., A 0921-5093 10.1016/S0921-5093(00)01367-8 302, 151 (2001).
17. T. Suzuoka, Trans. Jpn. Inst. Met. 2, 25 (1961).
18. www.comsol.com for precise description of this software.
19. T. Suzuoka, J. Phys. Soc. Jpn. 0031-9015 10.1143/JPSJ.19.839 19, 839 (1964).
20. S. Solmi, M. Ferri, M. Bersani, D. Giubertoni, and V. Soncini, J. Appl. Phys. 0021-8979 10.1063/1.1609640 94, 4950 (2003).
21. M. Petravić, B. G. Svensson, and J. S. Williams, Appl. Phys. Lett. 0003-6951 10.1063/1.108989 62, 278 (1993).
22. P. Dorner, W. Gust, B. Predel, U. Roll, A. Lodding, and H. Odelius, Philos. Mag. A 49, 557 (1984). 0141-8610
23. G. Hettich, H. Mehrer, and K. Maier, Inst. Phys. Conf. Ser. 46, 500 (1979).
24. N. R. Zangenberg, J. Lundsgaard Hansen, J. Fage-Pedersen, and A. Nylandsted Larsen, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.87.125901 87, 125901 (2001).
25. G. L. McVay and A. R. Ducharme, Phys. Rev. B 9, 627 (1974).
26. K. Dick, T. Dhanasekaran, Z. Zhang, and D. Miesel, J. Am. Chem. Soc. 0002-7863 10.1021/ja017281a 124, 2312 (2002).
27. W. H. Qi and M. P. Wang, Physica B (Amsterdam) 334, 432 (2003). 0921-4526
28. Z. L. Peng, P. J. Simpson, and P. Mascher, Electrochem. Solid-State Lett. 1099-0062 10.1149/1.1390985 3, 150 (2000).
29. M. Fujinami, T. Miyagoe, T. Sawada, and T. Akahane, J. Appl. Phys. 0021-8979 10.1063/1.1606855 94, 4382 (2003).
30. J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, and J. Y. Han, Appl. Phys. Lett. 0003-6951 10.1063/1.1569414 82, 3433 (2003).
31. G. D. Watkins, Mater. Sci. Semicond. Process. 1369-8001 10.1016/S1369-8001(00)00037-8 3, 227 (2000).
32. H. Bracht, J. Fage Pedersen, N. Zangenberg, A. Nylandsted Larsen, E. E. Haller, G. Lulli, and M. Posselt, Phys. Rev. Lett. 0031-9007 91, 245502 (2003).
33. J. A. Van Vechten, Phys. Rev. B 33, 2674 (1986).
34. S. Dannefaer, P. Mascher, and D. Kerr, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.56.2195 56, 2195 (1986).
35. F. El-Mellouhi, N. Mousseau, and P. Ordejón, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.205202 70, 205202 (2004).
36. D. Caliste, P. Pochet, T. Deutsch, and F. Laņon, Phys. Rev. B 0163-1829 10.1103/PhysRevB.75.125203 75, 125203 (2007).
37. B. Semmache, A. Merabet, C. Gontrand, and A. Laugier, Mater. Sci. Eng., B 38, 41 (1996). 0921-5107
38. M. A. Fortes, Mater. Sci. Forum 126-128, 343 (1993).
39. Y. Chen and C. A. Schuh, J. Appl. Phys. 101, 063524 (2007). 0021-8979