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Volumn 310, Issue 24, 2008, Pages 5270-5277
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Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods
a
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Author keywords
A1. Defects; A1. Twin formation; A2. Czochralski method; A2. Facets; A2. Growth from melt; A2. Growth rate; A2. LEC; A2. Single crystal growth; B1. Phosphides; B2. Semiconducting III V materials; B2. Semiconducting indium phosphide
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Indexed keywords
CRYSTAL GROWTH;
CRYSTAL GROWTH FROM MELT;
CRYSTAL STRUCTURE;
CRYSTALLIZATION;
CRYSTALLOGRAPHY;
CRYSTALS;
DIAMONDS;
ELECTRIC CONDUCTIVITY;
ELECTROCHEMICAL CELLS;
GRAIN BOUNDARIES;
HYDROSTATIC PRESSURE;
INDIUM PHOSPHIDE;
METAL REFINING;
PHOSPHORUS COMPOUNDS;
POWDERS;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR MATERIALS;
SINGLE CRYSTALS;
STATISTICAL METHODS;
STATISTICS;
SULFIDE MINERALS;
SYSTEM STABILITY;
TWINNING;
VAPOR PRESSURE;
ZINC;
ZINC SULFIDE;
A1. DEFECTS;
A1. TWIN FORMATION;
A2. CZOCHRALSKI METHOD;
A2. FACETS;
A2. GROWTH FROM MELT;
A2. GROWTH RATE;
A2. LEC;
A2. SINGLE CRYSTAL GROWTH;
B1. PHOSPHIDES;
B2. SEMICONDUCTING III-V MATERIALS;
B2. SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
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EID: 56949105307
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.09.163 Document Type: Article |
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Times cited : (20)
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References (18)
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