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Volumn 500, Issue 1-2, 2009, Pages 79-83

Microstructure and boundary phases of Lu-Al-doped silicon nitride by pressureless sintering

Author keywords

Grain boundary phase; Lu2O3; Microstructure; Pressureless sintering; Silicon nitride

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CRYSTALLINE MATERIALS; GRAIN BOUNDARIES; LUTETIUM COMPOUNDS; MICROSTRUCTURE; SINTERING;

EID: 56949101439     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2008.09.045     Document Type: Article
Times cited : (5)

References (24)
  • 9
    • 85162576147 scopus 로고    scopus 로고
    • N. Hirosaki, Y. Yamamoto, T. Nishimura, M. Mitomo, Japanese Patent 324327 (2000).
    • N. Hirosaki, Y. Yamamoto, T. Nishimura, M. Mitomo, Japanese Patent 324327 (2000).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.