Isothermal defect annealing in semiconductors investigated by time-delayed Mössbauer spectroscopy: Application to ZnO

Hyperfine Interactions

Volumn 188, Issue 1-3, 2009, Pages 85-89

  Gunnlaugsson, H P ^a   Weyer, G ^a   Mantovan, R ^b   Naidoo, D ^c   Sielemann, R ^d   Bharuth Ram, K ^e   Fanciulli, M ^b   Johnston, K ^f   Olafsson, S ^g   Langouche, G ^h  

^a AARHUS UNIVERSITY   (Denmark)

^b LABORATORIO MDM   (Italy)

^c UNIVERSITY OF THE WITWATERSRAND   (South Africa)

^d HAHN MEITNER INSTITUT   (Germany)

^e UNIVERSITY OF KWAZULU NATAL   (South Africa)

^f CERN   (Switzerland)

^g UNIVERSITY OF ICELAND   (Iceland)

^h KU LEUVEN   (Belgium)

Author keywords

Activation energies; Diffusion; M ssbauer spectroscopy; ZnO

Indexed keywords

EID: 56749160790     PISSN: 03043843     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10751-008-9893-4     Document Type: Article

References (9)

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