GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2008, Pages 39-40

  Bachmann, A ^a   Kashani Shirazi, K ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; HETEROJUNCTIONS; LASERS; SEMICONDUCTOR MATERIALS; SURFACE EMITTING LASERS; TUNNEL JUNCTIONS;

BURIED TUNNEL JUNCTIONS; CONTINUOUS WAVES; ELECTRICALLY PUMPED; LOW THRESHOLDS; MODE OPERATIONS;

SEMICONDUCTOR LASERS;

EID: 56749096995     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISLC.2008.4635998     Document Type: Conference Paper

References (4)

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2. C. Lauer, S. Szalay, G. Boehm, C. Lin, F. Koehler and M.-C. Amann: "Laser hygrometer using a vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 1.84 μm", IEEE Trans. Instr. Meas., vol. 54(3), pp. 1214-1218, June 2005.
3. O. Dier, C. Lauer and M.-C. Amann: "n-InAsSb / p-GaSb tunnel junctions with extremely low resistivity", Electron. Lett., vol. 42(7), pp. 419-420, March 2006.
4. +-InAsSb / n-GaSb contacts", Semicond. Sci. Technol., vol. 21, pp. 1274-1277, September 2006.