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Volumn 5, Issue 3, 2008, Pages 289-300

Patenting graphene: Opportunities and challenges
[No Author Info available]

Author keywords

[No Author keywords available]

Indexed keywords

LAWS AND LEGISLATION; NANOCOMPOSITES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; PATENTS AND INVENTIONS;

EID: 56549095364     PISSN: 15462080     EISSN: 15462080     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (43)
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    • See Geim & Novoselov, supra note 1, at 184
    • See Geim & Novoselov, supra note 1, at 184.
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    • See Geim & Novoselov, supra note 1, at 184 (For three or more layers, the spectra become increasingly complicated: Several charge carriers appear, and the conduction and valence bands start notably overlapping. This allows single-, double- and few- (3 to <10) layer graphene to be distinguished as three different types of 2D crystals ('graphenes'). Thicker structures should be considered, to all intents and purposes, as thin films of graphite.) (footnotes omitted).
    • See Geim & Novoselov, supra note 1, at 184 ("For three or more layers, the spectra become increasingly complicated: Several charge carriers appear, and the conduction and valence bands start notably overlapping. This allows single-, double- and few- (3 to <10) layer graphene to be distinguished as three different types of 2D crystals ('graphenes'). Thicker structures should be considered, to all intents and purposes, as thin films of graphite.") (footnotes omitted).
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    • See Geim & Novoselov, supra note 1, at 184 (Epitaxial growth of graphene offers probably the only viable route towards electronic applications . . ..).
    • See Geim & Novoselov, supra note 1, at 184 ("Epitaxial growth of graphene offers probably the only viable route towards electronic applications . . ..").
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    • Id. at 358 (Finally, we used our smallest devices (both QDs and QPCs) to increase dE by further decreasing their size using plasma etching. Some of the devices become overetched and stop conducting, but in other cases we have narrowed them down to a few nm so that they exhibit the transistor action even at room T . . . .).
    • Id. at 358 ("Finally, we used our smallest devices (both QDs and QPCs) to increase dE by further decreasing their size using plasma etching. Some of the devices become overetched and stop conducting, but in other cases we have narrowed them down to a few nm so that they exhibit the transistor action even at room T . . . .").
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    • § 103a, 2000
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    • 35 U.S.C
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    • KSR International Co. v. Teleflex Inc, 127 S. Ct. 1727 (2007) (decided April 30, 2007).
    • KSR International Co. v. Teleflex Inc, 127 S. Ct. 1727 (2007) (decided April 30, 2007).
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    • Id. at 1741 (quoting In re Kahn, 441 F.3d 977, 988 (Fed. Cir. 2006)).
    • Id. at 1741 (quoting In re Kahn, 441 F.3d 977, 988 (Fed. Cir. 2006)).
  • 29
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    • Id. at 1357
    • Id. at 1357.
  • 31
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    • PharmaStem Therapeutics, Inc. v. ViaCell, Inc., 491 F.3d 1342 (Fed. Cir. 2007) (decided July 9, 2007).
    • PharmaStem Therapeutics, Inc. v. ViaCell, Inc., 491 F.3d 1342 (Fed. Cir. 2007) (decided July 9, 2007).
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    • Id. at 1360
    • Id. at 1360.
  • 33
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    • Aventis Pharma Deutschland GmbH v. King Pharmaceuticals, Inc., 499 F.3d 1293 (Fed. Cir. 2007) (decided Sept. 11, 2007).
    • Aventis Pharma Deutschland GmbH v. King Pharmaceuticals, Inc., 499 F.3d 1293 (Fed. Cir. 2007) (decided Sept. 11, 2007).
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    • Id. at 1301
    • Id. at 1301.
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    • Ortho-McNeil Pharma. v. Mylan Laboratories, Inc., 520 F.3d 1358 (Fed. Cir. 2008) (decided Mar. 31, 2008).
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    • Id. at 1364 (quoting KSR, 127 S. Ct. at 1742).
    • Id. at 1364 (quoting KSR, 127 S. Ct. at 1742).
  • 37
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    • The Carbon Nanotube
    • For a detailed description of the carbon nanotube patent landscape, see, Patent Landscape, 3 NANOTECH. L. & BUS. 427 2006
    • For a detailed description of the carbon nanotube patent landscape, see John Miller & Drew Harris, The Carbon Nanotube Patent Landscape, 3 NANOTECH. L. & BUS. 427 (2006).
    • Miller, J.1    Harris, D.2
  • 38
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    • See, for example, U.S. Patent No. 6,683,783 Smalley et al
    • See, for example, U.S. Patent No. 6,683,783 (Smalley et al.).
  • 39
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    • U.S. Patent Application Publication 2003/0129305 Wu et al
    • U.S. Patent Application Publication 2003/0129305 (Wu et al.).
  • 40
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    • U.S. Patent No. 5,186,919 Bunnell
    • U.S. Patent No. 5,186,919 (Bunnell).
  • 41
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    • Geim & Novoselov, supra note 1, at 185
    • Geim & Novoselov, supra note 1, at 185.
  • 42
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    • U.S. Patent No. 7,170,120 at Col. 1 lines 38-42
    • Datta et al. U.S. Patent No. 7,170,120 at Col. 1 lines 38-42.
    • Datta1
  • 43
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    • For a more detailed discussion of this argument, see, available at, April 4
    • For a more detailed discussion of this argument, see Bryan Wilson, Graphene vs Carbon Nanotubes, available at http://nanolabweb.com/blog/ index.php/36/graphene-vs-carbon-nanotubes/ (April 4, 2008).
    • (2008) Graphene vs Carbon Nanotubes
    • Wilson, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.