The optimization of incident angles of low-energy oxygen ion beams for increasing sputtering rate on silicon samples

Applied Surface Science

Volumn 255, Issue 4, 2008, Pages 1357-1359

  Sasaki, T ^a   Yoshida, N ^a   Takahashi, M ^a   Tomita, M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Atomic force microscopy; Delta doped silicon sample; Incident angle; Low energy oxygen ion beam; Sputtering rate; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; IONS; OXYGEN; SILICON; SPUTTERING; SURFACE ROUGHNESS;

ANALYTICAL CONDITIONS; DELTA-DOPED SILICON SAMPLE; DEPTH RESOLUTION; INCIDENT ANGLES; LOW ENERGY OXYGEN ION BEAM; OXYGEN ION BEAM; SPUTTERED SURFACES; SPUTTERING RATE;

ION BEAMS;

EID: 56449101423     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.024     Document Type: Article

References (5)

1. Wilson R.G., Stevie F.A., and Magee C.W. Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis (1989), Wiley, New York
2. Juhel M., Laugier F., Delille D., Wyon C., Kwakman L.F.Tz., and Hopstaken M. Appl. Surf. Sci. Technol. 252 (2006) 7211-7213
3. Ng C.M., Wee A.T.S., Huan C.H.A., and See A. J. Vac. Sci. Technol. B 19 3 (2001) 829-835
4. Hofmann S. Surf. Interface Anal. 27 (1999) 825-834
5. Hofmann S. Surf. Interface Anal. 30 (2000) 228-236