SIMS depth profiling of boron ultra shallow junctions using oblique O 2 + beams down to 150 eV

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7211-7213

  Juhel, M ^a   Laugier, F ^b   Delille, D ^c   Wyon, C ^b   Kwakman, L F Tz ^c   Hopstaken, M ^c  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Boron; Depth resolution; Low energy; Oxygen; SIMS

Indexed keywords

BORON; ION BOMBARDMENT; MAGNETRON SPUTTERING; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

BORON DELTA-DOPED LAYERS; DEPTH RESOLUTION; LOW ENERGY;

SEMICONDUCTOR JUNCTIONS;

EID: 33747190889     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.242     Document Type: Article

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