Defects in the Ti/GaAs system probed by monoenergetic positron beams

Journal of Physics Condensed Matter

Volumn 9, Issue 32, 1997, Pages 6827-6835

  Uedono, A ^a   Fujii, S ^b   Moriya, T ^a   Kawano, T ^a   Tanigawa, S ^a   Suzuki, R ^c   Ohdaira, T ^c   Mikado, T ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5644220489     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/9/32/006     Document Type: Article

References (36)

1. Shur M 1987 GaAs Devices and Circuits (New York: Plenum)
2. Tersoff J 1984 Phys. Rev. Lett. 52 465
3. Spicer W E, Liliental-Weber Z, Weber E, Newman N, Kendelewicz T, Cao R, McCants C, Mahowald P, Miyano K and Lindau I 1988 J. Vac. Sci. Technol. B 6 1245
4. Wada O, Yanagisawa S and Takanashi H 1976 Appl. Phys. Lett. 29 263
5. Kim K B, Kniffin M, Sinclair R and Helms C R 1988 J. Vac. Sci. Technol. A 6 1473
6. Ludeke R and Landgren G 1986 Phys. Rev. B 33 5526
7. Hautojärvi P and Vehanen A 1979 Positrons in Solids ed P Hautojärvi (Berlin: Springer) p 1
8. West RN 1979 Positrons in Solids ed P Hautojärvi (Berlin: Springer) p 89
9. Dannefaer S and Puff W 1993 Phys. Rev. B 47 4775
10. Ambigapathy R, Manuel A A, Hautojärvi P, Saarinen K and Corbel C 1994 Phys. Rev. B 50 2188
11. Kuisma S, Saarinen K, Hautojärvi P, Corbel C and LeBerre C 1996 Phys. Rev. B 53 9814
12. Schultz P J and Lynn KG 1988 Rev. Mod. Phys. 60 701
13. Ling C C, Lee T C, Fung S, Beling C D, Weng H, Xu J, Sun S and Han R 1994 J. Phys.: Condens. Matter 6 1133 Ling C C, Lee T C, Fung S, Beling C D, Weng H, Xu J, Sun S and Han R 1995 Appl. Surf. Sci. 85 305
14. Ling C C, Lee T C, Fung S, Beling C D, Weng H, Xu J, Sun S and Han R 1994 J. Phys.: Condens. Matter 6 1133 Ling C C, Lee T C, Fung S, Beling C D, Weng H, Xu J, Sun S and Han R 1995 Appl. Surf. Sci. 85 305
15. Uedono A, Fujii S, Moriya T, Kawano T and Tanigawa S 1995 Japan. J. Appl. Phys. 34 5505
16. Dannefaer S 1990 Defect Control in Semiconductors ed K Sumino (Amsterdam: Elsevier) p 1561
17. Uedono A, Kitano T, Watanabe M, Moriya T, Kawano T, Tanigawa S, Suzuki R, Ohdaira H and Mikado T 1996 Japan. J. Appl. Phys. 35 2000
18. van Veen A, Schut H, de Vries J, Hakvoort R A and Ijpma M R 1990 AIP Conf. Proc. 218 171
19. Uedono A, Wei L, Tanigawa S, Suzuki R, Ohgaki H, Mikado T and Ohji Y 1994 J. Appl. Phys. 75 3822
20. Suzuki R, Kobayashi Y, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T and Tomimasu T 1991 Japan. J. Appl. Phys. 30 L532
21. Kirkegaard P, Eldrup M, Mogensen O E and Pedersen N 1981 J. Comput. Phys. Commun. 23 307
22. Corbel C, Stucky M, Hautojärvi P, Saarinen K and Moser P 1988 Phys. Rev. B 38 8192
23. Dannefaer S, Mascher P and Kerr D 1989 J. Phys.: Condens. Matter 1 3213
24. MacKenzie I K 1983 Positron Solid-State Physics ed W Brandt and A Dupasquier (Amsterdam: Elsevier) p 196
25. Uedono A, Kawano T, Tanigawa S, Wada K and Nakanishi H 1994 Japan. J. Appl. Phys. 33 L1374
26. Uedono A, Tanigawa S and Sakairi H 1991 J. Nucl. Mater. 184 191
27. Shullman M A, Beardsley G M and Berko S 1975 Appl. Phys. 5 367
28. Chiba T and Akahane T 1985 Positron Annihilation ed P C Jain, R M Singru and K P Gopinathan (Singapore: World Scientific) p 119
29. Saito M, Oshiyama A and Tanigawa S 1991 Phys. Rev. B 44 10 601
30. Uedono A, Moriya T, Komuro N, Kawano T, Tanigawa S and Ikari A 1996 Japan. J. Appl. Phys. 35 4599
31. Uedono A, Kitano T, Watanabe M, Moriya T, Komuro N, Kawano T, Tanigawa S, Suzuki R, Ohdaira T and Mikado T 1997 Japan. J. Appl. Phys. 36 969
32. Shan Y Y, Au H L, Ling C C, Lee T C, Panda B K, Fung S, Beling C D, Wang Y Y and Weng H M 1994 Appl. Phys. A 59 259
33. Uedono A and Tanigawa S 1990 Japan. J. Appl. Phys. 29 L346
34. Uedono A, Ujihira Y, Ikari A, Haga H and Yoda O 1993 Hyperfine Interact. 79 615
35. Uedono A, Moriya T, Kawano T, Tanigawa S, Nagai and Umeda K 1995 Japan. J. Appl. Phys. 34 6293
36. Kowalczyk S P, Waldrop J R and Grant R W 1981 J. Vac. Sci. Technol. 19 611