Surface modification of CdS quantum dots using thiols - Structural and photophysical studies

Nanotechnology

Volumn 19, Issue 43, 2008, Pages

  Thangadurai, P ^a,b   Balaji, S ^a   Manoharan, P T ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AGENTS; CADMIUM COMPOUNDS; DATA STORAGE EQUIPMENT; ENERGY GAP; FLUORESCENCE; GALLIUM ALLOYS; LIGHT EMISSION; LUMINESCENCE; MICROSCOPIC EXAMINATION; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; QUENCHING; SEMICONDUCTOR QUANTUM DOTS; X RAY ANALYSIS;

ABSORPTION WAVELENGTHS; BAND GAPS; BONDING MECHANISMS; CAPPING AGENTS; CDS QUANTUM DOTS; DITHIOTHREITOL; FLUORESCENCE PROPERTIES; GLUTATHIONE; GRAIN SIZES; IN BANDS; MERCAPTOETHANOL; ORGANIC THIOLS; PHOTOPHYSICAL; PHOTOPHYSICAL STUDIES; QUANTUM DOTS; SEMI-CONDUCTORS; SPECTROSCOPIC TECHNIQUES; STRUCTURAL STUDIES; SURFACE MODIFICATIONS; SURFACE TRAPS; UV-VISIBLE; WET CHEMICALS; X-RAY DIFFRACTIONS;

SEMICONDUCTING CADMIUM COMPOUNDS;

CADMIUM SULFIDE; CYSTEINE; DITHIOTHREITOL; GLUTATHIONE; MERCAPTOETHANOL; METHIONINE; QUANTUM DOT; THIOL DERIVATIVE;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; DIFFUSE REFLECTANCE SPECTROSCOPY; ENERGY ABSORPTION; FLUORESCENCE SPECTROSCOPY; INFRARED SPECTROSCOPY; NANOENCAPSULATION; OPTICS; PHOTOCHEMICAL QUENCHING; PHOTOLUMINESCENCE; POLARIMETRY; PRIORITY JOURNAL; SEMICONDUCTOR; STRUCTURE ANALYSIS; SURFACE PROPERTY; THERMAL ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION;

EID: 56349141695     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/43/435708     Document Type: Article

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