![]() |
Volumn 23, Issue 10, 2008, Pages
|
Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ALUMINUM;
CATHODOLUMINESCENCE;
EPILAYERS;
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
LIGHT EMISSION;
LUMINESCENCE;
RAMAN SCATTERING;
SEMICONDUCTING GALLIUM;
ALLOY LAYERS;
BAND EDGES;
FREQUENCY SHIFTS;
GAN SUBSTRATES;
GAP BOWINGS;
LARGE BANDS;
LOWER ENERGIES;
LUMINESCENCE PEAKS;
N FILMS;
PEAK ENERGIES;
RESIDUAL STRAINS;
GALLIUM ALLOYS;
|
EID: 56349137234
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/23/10/105002 Document Type: Article |
Times cited : (1)
|
References (9)
|