MOVPE growth of GaN around ZnO nanopillars

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5139-5142

  Thapa, S B ^a   Hertkorn, J ^a   Wunderer, T ^a   Lipski, F ^a   Scholz, F ^a   Reiser, A ^a   Xie, Y ^a   Feneberg, M ^a   Thonke, K ^a   Sauer, R ^a   Durrschnabel M ^b   Yao, L D ^b   Gerthsen, D ^b   Hochmuth, H ^c   Lorenz, M ^c   Grundmann, M ^c  

^a UNIVERSITY OF ULM   (Germany)

^b UNIVERSITY OF KARLSRUHE   (Germany)

^c UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

A2. MOVPE; B1. GaN; B1. Nanopillars; B1. Nanotubes; B1. ZnO

Indexed keywords

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; NANOSTRUCTURES; NANOTUBES; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ZINC ALLOYS; ZINC OXIDE;

A2. MOVPE; B1. GAN; B1. NANOPILLARS; B1. NANOTUBES; B1. ZNO;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 56249106839     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.009     Document Type: Article

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