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Materials Research Bulletin

Volumn 44, Issue 1, 2009, Pages 41-44

Effects of low-energy hydrogen ion implantation on optical properties of ZnO nanowires

(6) Wang, D F a Lu, H B a Li, J C a Wu, Y a Tian, Y a Lee, Y P b

a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS (China)

b Hanyang University (South Korea)

Author keywords

A. Semiconductors; C. Electron microscopy; D. Optical properties

Indexed keywords

ANNEALING; ARGON; ELECTRIC WIRE; INERT GASES; ION BOMBARDMENT; ION IMPLANTATION; MICROSCOPIC EXAMINATION; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; OPTICAL MATERIALS; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PASSIVATION; SEMICONDUCTING ZINC COMPOUNDS; ZINC ALLOYS; ZINC OXIDE;

A. SEMICONDUCTORS; ARGON ATMOSPHERES; C. ELECTRON MICROSCOPY; D. OPTICAL PROPERTIES; DEEP LEVELS; EMISSION PEAKS; HIGH DOSES; HYDROGEN DOPING; HYDROGEN IONS; NATIVE DEFECTS; NONRADIATIVE RECOMBINATION CENTERS; PASSIVATION EFFECTS; PHOTOLUMINESCENCE PROPERTIES; POTENTIAL APPLICATIONS; UV EMISSIONS; VIOLET EMISSIONS; VISIBLE EMISSIONS; ZNO NANOWIRES;

HYDROGEN;

EID: 56249096871 PISSN: 00255408 EISSN: None Source Type: Journal
DOI: 10.1016/j.materresbull.2008.04.005 Document Type: Article

Times cited : (13)

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