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Volumn 310, Issue 23, 2008, Pages 4751-4753

Ripening of InAs quantum dots on GaAs (0 0 1) investigated with in situ scanning tunneling microscopy in metal-organic vapor phase epitaxy

(3) Kremzow, Raimund a Pristovsek, Markus a Kneissl, Michael a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

A1. Low dimensional structures; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; ARSENIC; CRYSTAL GROWTH; GALLIUM ALLOYS; INDIUM ARSENIDE; MICROSCOPIC EXAMINATION; OPTICAL WAVEGUIDES; OSTWALD RIPENING; QUANTUM ELECTRONICS; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SILICON; VAPORS;

A1. LOW DIMENSIONAL STRUCTURES; A1. SURFACE PROCESSES; A3. METALORGANIC VAPOR PHASE EPITAXY; B2. SEMICONDUCTING III-V MATERIALS; IN SITU STM; INAS QUANTUM DOTS; OVER PRESSURES; QD DENSITIES; RING OPERATORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 56249096858 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.047 Document Type: Article

Times cited : (11)

References (13)

1
- 33745438669
- Lochmann A., Stock E., Schulz O., Hopfer F., Bimberg D., Haisler V.A., Toropov A.K.B.A.I., and Kalagin A.K. Electron. Lett. 42 13 (2006) 774
- (2006) Electron. Lett. , vol.42 , Issue.13 , pp. 774
- Lochmann, A.¹ Stock, E.² Schulz, O.³ Hopfer, F.⁴ Bimberg, D.⁵ Haisler, V.A.⁶ Toropov, A.K.B.A.I.⁷ Kalagin, A.K.⁸

2
- 17944368737
- Lee H., Kim S.M., Park Y.J., and Kim E.K. J. Appl. Phys. 90 5 (2001) 2290
- (2001) J. Appl. Phys. , vol.90 , Issue.5 , pp. 2290
- Lee, H.¹ Kim, S.M.² Park, Y.J.³ Kim, E.K.⁴

3
- 33744638778
- Aspnes D.E., and Studna A.A. Phys. Rev. Lett. 54 17 (1985) 1956
- (1985) Phys. Rev. Lett. , vol.54 , Issue.17 , pp. 1956
- Aspnes, D.E.¹ Studna, A.A.²

4
- 0001081496
- Aspnes D.E. J. Vac. Sci. Technol. B 3 (1985) 1498
- (1985) J. Vac. Sci. Technol. B , vol.3 , pp. 1498
- Aspnes, D.E.¹

5
- 5744237803
- Berkovits V.L., Ivantsov L.F., Kiselev V.A., Makarenko I.V., Minashvili T.A., and Safarov V.I. JETP Lett. 41 (1985) 551
- (1985) JETP Lett. , vol.41 , pp. 551
- Berkovits, V.L.¹ Ivantsov, L.F.² Kiselev, V.A.³ Makarenko, I.V.⁴ Minashvili, T.A.⁵ Safarov, V.I.⁶

6
- 0001687631
- Steimetz E., Zettler J.-T., Richter W., Westwood D.I., Woolf D.A., and Sobiesierski Z. J. Vac. Sci. Technol. B 14 4 (1996) 3058
- (1996) J. Vac. Sci. Technol. B , vol.14 , Issue.4 , pp. 3058
- Steimetz, E.¹ Zettler, J.-T.² Richter, W.³ Westwood, D.I.⁴ Woolf, D.A.⁵ Sobiesierski, Z.⁶

7
- 0030677202
- Steimetz E., Schienle F., Zettler J.-T., and Richter W. J. Crystal Growth 170 (1997) 208
- (1997) J. Crystal Growth , vol.170 , pp. 208
- Steimetz, E.¹ Schienle, F.² Zettler, J.-T.³ Richter, W.⁴

8
- 33747143429
- Raehmer B., Pristovsek M., Breusing M., Kremzow R., and Richter W. Appl. Phys. Lett. 89 6 (2006) 063108
- (2006) Appl. Phys. Lett. , vol.89 , Issue.6 , pp. 063108
- Raehmer, B.¹ Pristovsek, M.² Breusing, M.³ Kremzow, R.⁴ Richter, W.⁵

9
- 33846439781
- Pristovsek M., Rähmer B., Breusig M., Kremzow R., and Richter W. J. Crystal Growth 298 (2007) 8
- (2007) J. Crystal Growth , vol.298 , pp. 8
- Pristovsek, M.¹ Rähmer, B.² Breusig, M.³ Kremzow, R.⁴ Richter, W.⁵

10
- 0000014620
- Ostwald W. Z. Phys. Chem. 34 (1900) 495
- (1900) Z. Phys. Chem. , vol.34 , pp. 495
- Ostwald, W.¹

11
- 33646109512
- Lifshitz I.M., and Slyozov V.V. J. Phys. Chem. Solids 19 (1961) 35
- (1961) J. Phys. Chem. Solids , vol.19 , pp. 35
- Lifshitz, I.M.¹ Slyozov, V.V.²

12
- 0001333772
- Wagner C. Z. Elektrochem. 65 (1961) 581
- (1961) Z. Elektrochem. , vol.65 , pp. 581
- Wagner, C.¹

13
- 35949007820
- Yao J.H., Elder K.R., Guo H., and Grant M. Phys. Rev. B 47 21 (1993) 14110
- (1993) Phys. Rev. B , vol.47 , Issue.21 , pp. 14110
- Yao, J.H.¹ Elder, K.R.² Guo, H.³ Grant, M.⁴

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