In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 8-11

  Pristovsek, M ^a   Rahmer B ^a   Breusig, M ^a   Kremzow, R ^a   Richter, W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

A1. Scanning tunneling microscopy; A3. Metal organic vapour phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; DESORPTION; INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; VAPOR PHASE EPITAXY;

INAS GROWTH RATE; METAL ORGANIC VAPOR PHASE EPITAXY; MOVPE PROCESS; SEMICONDUCTING III-V MATERIALS;

SCANNING TUNNELING MICROSCOPY;

EID: 33846439781     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.061     Document Type: Article

References (6)

1. Binning G., Rohrer H., Gerber C., and Weibel E. Phys. Rev. Lett. 49 (1982) 57
2. Voigtländer B., and Zinner A. Appl. Phys. Lett. 63 (1993) 3055
3. Köhler U., Andersohn L., and Dahlheim B. Appl. Phys. A 57 (1993) 491
4. Tsukamoto S., and Koguchi N. J. Crystal Growth 201/202 (1999) 118
5. B. Voigtländer, personal communication.
6. Voigtländer B., and Kaestner M. J. Vac. Sci. Technol. B 17 (1999) 294