Conductively cooled 637-nm InGaP broad-area lasers and laser bars with conversion efficiencies up to 37% and a small vertical far field of 30°

IEEE Photonics Technology Letters

Volumn 20, Issue 22, 2008, Pages 1824-1826

  Kaspari, Christian ^a   Sumpf, Bernd ^a   Zorn, Martin ^a   Fricke, Jörg ^a   Ressel, Peter ^a   Paschke, Katrin ^a   Weyers, Markus ^a   Erbert, Götz ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Continuous wave (CW) lasers; Conversion efficiency; Red lasers; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; CONVERSION EFFICIENCY; LASER CLADDING; LASERS; QUANTUM WELL LASERS;

ALGAINP; CLADDING LAYERS; CONDUCTIVELY COOLED; CONTINUOUS-WAVE (CW) LASERS; CW POWERS; FAR FIELDS; FILLING FACTORS; HIGHLY EFFICIENT; LASER BARS; LASER DIODES; LASER STRUCTURES; QUANTUM WELLS; RED LASERS; SINGLE LASERS; STRIPE WIDTHS; WAVEGUIDE LAYERS;

SEMICONDUCTOR LASERS;

EID: 56049092029     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2004352     Document Type: Article

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