Dislocation scattering in Alx Ga1-x NGaN heterostructures

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

  Xu, Xiaoqing ^a   Liu, Xianglin ^a   Han, Xiuxun ^a   Yuan, Hairong ^a   Wang, Jun ^a   Guo, Yan ^a   Song, Huaping ^a   Zheng, Gaolin ^a   Wei, Hongyuan ^a   Yang, Shaoyan ^a   Zhu, Qinsheng ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRON GAS; ELECTRON MOBILITY; PHASE INTERFACES; SCATTERING; TWO DIMENSIONAL ELECTRON GAS;

DISLOCATION DENSITIES; DISLOCATION SCATTERINGS; EXPERIMENTAL DATUMS; HETEROSTRUCTURES; INTERFACE ROUGHNESSES; LOW TEMPERATURES;

SINGLE CRYSTALS;

EID: 55849145158     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013836     Document Type: Article

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