Realization of hybrid silicon core/silicon nitride shell nanodots by LPCVD for NVM application

Materials Research Society Symposium Proceedings

Volumn 1071, Issue , 2008, Pages 17-22

  Colonna, Jean ^a   Molas, Gabriel ^a   Gely, Marc W ^a   Bocquet, Marc ^a   Jalaguier, Eric ^a   Slavo, Barbara De ^a   Grampeix, Helen ^a   Brianceau, Pierre ^a   Yckache, Karim ^a   Papon, Anne Marie ^a   Auvert, Geoffroy ^a   Bongiorno, Corrado ^b   Lombardo, Salvatore ^b  

^a CEA LETI   (France)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHLORINE COMPOUNDS; DIGITAL STORAGE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH-K DIELECTRIC; NANODOTS; NITRIDES; OXIDATION RESISTANCE; SCANNING ELECTRON MICROSCOPY; SHELLS (STRUCTURES); SILICON NITRIDE; THRESHOLD VOLTAGE; VAPOR DEPOSITION;

CRYSTALLINE SILICONS; ENERGY FILTERED TEM; HIGH-QUALITY NITRIDE FILMS; IN-SITU DEPOSITION; INTERPOLY DIELECTRICS; MORPHOLOGICAL CHARACTERIZATION; NONVOLATILE MEMORY DEVICES; THRESHOLD VOLTAGE SHIFTS;

AMORPHOUS SILICON;

EID: 55849134777     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1071-f02-02     Document Type: Conference Paper

References (5)

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2. F. Mazen et al. Applied Surface Science 214, p359-363, 2003
3. F. Martin et al. Semicond. Sci. Technol. 6, 1100, 1991
4. M. Yoshimaru et al. IEEE Transactions on Electron Devices, vol 41, n° 10, 1994
5. G Molas et al. To be presented at IEDM 2007, Washington DC.