Molecular dynamics calculation of thermophysical properties for a highly reactive liquid

Physical Review E - Statistical, Nonlinear, and Soft Matter Physics

Volumn 78, Issue 4, 2008, Pages

  Wang, H P ^a   Luo, B C ^a   Wei, B ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; CALORIMETRY; CAPILLARITY; DYNAMICS; EXPERIMENTS; LIQUIDS; MOLECULAR DYNAMICS; QUANTUM CHEMISTRY; SEMICONDUCTOR DOPING; SILICON; SPECIFIC HEAT; SULFUR COMPOUNDS; SURFACE CHEMISTRY; SURFACE DIFFUSION; SURFACE PROPERTIES; SURFACE TENSION; SURFACE WAVES; THERMODYNAMIC PROPERTIES; UNDERCOOLING; WETTING;

ARRHENIUS EQUATIONS; BROAD TEMPERATURE RANGES; DIFFUSION COEFFICIENTS; EMBEDDED ATOM METHODS; EXPERIMENTAL DATUMS; EXPERIMENTAL MEASUREMENTS; HIGH REACTIVITIES; LIQUID SILICONS; METASTABLE STATES; MOLECULAR DYNAMICS CALCULATIONS; PHYSICAL CHARACTERISTICS; POTENTIAL MODELS; QUADRATIC FUNCTIONS; SW POTENTIALS; TEMPERATURE RANGES; THERMOPHYSICAL PROPERTIES;

MODAL ANALYSIS;

EID: 55849122272     PISSN: 15393755     EISSN: 15502376     Source Type: Journal    
DOI: 10.1103/PhysRevE.78.041204     Document Type: Article

References (25)

1. T. Morishita, Phys. Rev. Lett. 10.1103/PhysRevLett.97.165502 97, 165502 (2006).
2. M. Watanabe, M. Adachi, T. Morishita, K. Higuchi, H. Kobatake, and H. Fukuyama, Faraday Discuss. 136, 279 (2007).
3. Z. H. Zhou, S. Mukherjee, and W. K. Rhim, J. Cryst. Growth 10.1016/S0022-0248(03)01430-1 257, 350 (2003).
4. M. Langen, T. Hibiya, M. Eguchi, and I. Egry, J. Cryst. Growth 10.1016/S0022-0248(97)00619-2 186, 550 (1994).
5. H. Sasaki, E. Tokizaki, K. Terashima, and S. Kimura, J. Cryst. Growth 10.1016/0022-0248(94)90170-8 139, 225 (1994).
6. H. P. Wang, C. D. Cao, and B. Wei, Appl. Phys. Lett. 10.1063/1.1751618 84, 4062 (2004).
7. H. M. Lu, T. H. Wang, and Q. Jiang, J. Cryst. Growth 293, 294 (2006).
8. S. Mukherjee, W. L. Johnson, and W. K. Rhim, Appl. Phys. Lett. 10.1063/1.1844596 86, 014104 (2004).
9. J. Brillo and I. Egry, J. Mater. Sci. 10.1007/s10853-005-1935-6 40, 2213 (2005).
10. E. A. Brener, and D. E. Temkin, Phys. Rev. Lett. 10.1103/PhysRevLett.94. 184501 94, 184501 (2005).
11. X. J. Han, M. Chen, and Z. Y. Guo, J. Phys.: Condens. Matter 10.1088/0953-8984/16/15/008 16, 2565 (2004).
12. Y. S. Sung, H. Takeya, K. Hirata, and K. Togano, Appl. Phys. Lett. 10.1063/1.1578517 82, 3638 (2003).
13. M. Chen, C. Yang, and Z. Y. Guo, Int. J. Thermophys. 22, 1295 (2001).
14. K. Moriguchi, and M. Igarashi, Phys. Rev. B 10.1103/PhysRevB.74.024111 74, 024111 (2006).
15. L. Koci, A. B. Belonoshko, and R. Ahuja, Phys. Rev. B 10.1103/PhysRevB.73.224113 73, 224113 (2006).
16. M. J. P. Nijmeijer, A. F. Bakker, and C. Bruin, J. Chem. Phys. 10.1063/1.454902 89, 3789 (1988).
17. W. Yu, Z. Q. Wang, and D. Stroud, Phys. Rev. B 10.1103/PhysRevB.54.13946 54, 13946 (1996).
18. F. H. Stillinger and T. A. Weber, Phys. Rev. B 10.1103/PhysRevB.31.5262 31, 5262 (1985).
19. M. S. Daw and M. I. Baskes, Phys. Rev. Lett. 10.1103/PhysRevLett.50.1285 50, 1285 (1983).
20. M. S. Daw and M. I. Baskes, Phys. Rev. B 10.1103/PhysRevB.29.6443 29, 6443 (1984).
21. M. I. Baskes, Phys. Rev. B 10.1103/PhysRevB.46.2727 46, 2727 (1992).
22. M. Przyborowski, T. Hibiya, M. Eguchi, and I. Egry, J. Cryst. Growth 10.1016/0022-0248(95)00056-9 151, 60 (1995).
23. W. K. Rhim, and K. Ohsaka, J. Cryst. Growth 10.1016/S0022-0248(99)00437-6 208, 313 (2000).
24. H. Fujii, T. Matsumoto, N. Hata, T. Nakano, M. Kohno, and K. Nogi, Metall. Mater. Trans. A 10.1007/s11661-000-0168-1 31, 1585 (2000).
25. Z. F. Yuan, K. Mukai, and W. L. Huang, Langmuir 18, 2054 (2002).