Chemical nanoparticle deposition of transparent ZnO thin films

Electrochemical and Solid-State Letters

Volumn 10, Issue 1, 2007, Pages

  Han, S Y ^a,b   Chang, Y J ^a,c   Lee, D H ^a   Ryu, S O ^a,b   Lee, T J ^b   Chang, C H ^a,c  

^a Oregon State University   (United States)

^b Yeungnam University   (South Korea)

^c ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW-COST TECHNIQUE; NANOPARTICLES; OPTICAL BANDGAP; POST-AIR-ANNEALING PROCESS;

ANNEALING; CHEMICAL REACTORS; ELECTRON MOBILITY; MISFET DEVICES; THIN FILMS; ZINC OXIDE;

NANOSTRUCTURED MATERIALS;

EID: 33845368126     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2372228     Document Type: Article

References (25)

1. See, for example, MRS Bull., 25 (2000).
2. K. L. Chopra, S. Major, and D. K. Pandya, Thin Solid Films, 102, 1 (1983).
3. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., p. 849, John Wiley, New York (1981).
4. A. Ghosh and S. Basu, Mater. Chem. Phys., 27, 45 (1991).
5. T. Nii, I. Sugiyama, T. Kase, M. Sato, Y. Kaniyama, K. Kuriyagawa, K. Kushiya, and H. Takeshita, in Proceedings of the First World Conference Photovoltaic Energy Conversion, p. 254 (1994).
6. M. Ortega-López and A. Morales-Acevedo, in Proceedings of the 26th IEEE Photovoltaic Specialists Conference, p. 555 (1997).
7. B. J. Norris, J. Anderson, J. F. Wager, and D. A. Keszler, J. Phys. D, 36, L105 (2003).
8. J. Pouzet, J. C. Bernede, A. Khllil, H. Essaidi, and S. Benhida, Thin Solid Films, 208, 252 (1992).
9. R. Ionov and D. Nesheva, Thin Solid Films, 213, 230 (1992).
10. P. O'Brien, Chemtronics, 5, 61 (1991).
11. S. Bonilla and E. A. Dalchiele, Thin Solid Films, 204, 397 (1991).
12. D. Raviendra and J. K. Sharma, J. Appl. Phys., 58, 838 (1985).
13. J. M. Bian, X. M. Li, C. Y. Zhang, L. D. Chen, and Q. Yao, Appl. Phys. Lett., 84, 3783 (2004).
14. J. M. Bian, X. M. Li, X. D. Gao, W. D. Yu, and L. D. Chen, Appl. Phys. Lett., 84, 541 (2004).
15. T. Saeed and P. O'Brien, Thin Solid Films, 271, 35 (1995).
16. P. O'Brien, T. Saeed, and J. Knowles, J. Mater. Chem., 6, 1135 (1996).
17. K. Govender, D. S. Bolye, P. B. Kenway, and P. O'Brien, J. Mater. Chem., 14, 2575 (2004).
18. Y.-J. Chang, P. H. Mugdur, A. A. Morrone, S.-Y. Han, S.-O. Ryu, T.-J. Lee, and C.-H. Chang, Electrochem. Solid-State Lett., 9, G174 (2006).
19. E. M. Wong, P. G. Hoertz, C. J. Liang, B.-M. Shi, G. J. Meyer, and P. C. Searson, Langmuir, 17, 8362 (2001).
20. D. K. Schroder, Semiconductor Material and Device Characterization 2nd ed., John Wiley and Sons, Inc., New York (1998).
21. R. F. Pierret, Field Effect Devices, 2nd ed., Addison-Wesley, New York (1990).
22. R. L. Hoffman, J. Appl. Phys., 95, 5813 (2004).
23. Y. Ohya, T. Niwa, T. Ban, and Y. Takahashi, Jpn. J. Appl. Phys., Part 1, 40, 297 (2001).
24. S. K. Volkman, B. A. Mattis, S. E. Molesa, J. B. Lee, A. de la Fuence Vornbrock, T. Bakhishev, and V. Subramanian, Tech. Dig. - Int. Electron Devices Meet., 2004, 769.
25. B. Sun and H. Sirringhaus, Nano Lett., 5, 2408 (2005).