Hot electron effects and nonlinear transport in hole doped manganites

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

  Jain, Himanshu ^a,c   Raychaudhuri, A K ^a,b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b S N BOSE NATIONAL CENTRE FOR BASIC SCIENCES   (India)

^c GE GLOBAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; HEATING; HOT CARRIERS; HOT ELECTRONS; INSULATION; OXIDE MINERALS;

COLOSSAL ELECTRO RESISTANCES; COULOMB GAPS; DOPED MANGANITES; ELECTRON EFFECTS; ELECTRON TRANSPORTS; EXPERIMENTAL VALUES; FERROMAGNETIC INSULATING; HIGH INPUT POWERS; INDUCED RESISTANCES; NONLINEAR TRANSPORTS; TIME DEPENDENCES;

ELECTRONS;

EID: 55849101140     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3020691     Document Type: Article

References (10)

1. A. Odagawa, H. Sato, I. H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, and H. Adachi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.224403 70, 224403 (2004); S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 0003-6951 10.1063/1.126464 76, 2749 (2000).
2. Z. W. Xing, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 0003-6951 10.1063/1.2759476 91, 052106 (2007).
3. A. Guha, A. Ghosh, A. K. Raychaudhuri, S. Parashar, A. R. Raju, and C. N. R. Rao, Appl. Phys. Lett. 0003-6951 10.1063/1.125358 75, 3381 (1999).
4. B. Fisher, J. Genossar, K. B. Chashka, L. Patlagan, and G. M. Reisner, Appl. Phys. Lett. 0003-6951 10.1063/1.2194316 88, 152103 (2006).
5. H. Jain, A. K. Raychaudhuri, Ya. M. Mukovskii, and D. Shulyatev, Appl. Phys. Lett. 0003-6951 10.1063/1.2361168 89, 152116 (2006).
6. H. Jain, A. K. Raychaudhuri, N. Ghosh, and H. L. Bhat, Phys. Rev. B 0163-1829 10.1103/PhysRevB.76.104408 76, 104408 (2007).
7. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).
8. D. S. Dessau and T. Saitoh, Science 0036-8075 10.1126/science.287.5454. 767a 287, 767a (2000); R. Joynt, Science 0036-8075 10.1126/science.287.5454.767a 287, 767a (2000).
9. M. Galeazzi, D. Liu, D. McCammon, L. E. Rocks, W. T. Sanders, B. Smith, P. Tan, J. E. Vaillancourt, K. R. Boyce, R. P. Brekosky, J. D. Gygax, R. L. Kelly, C. A. Kilbourne, F. S. Porter, C. M. Stable, and A. E. Szymkowiak, Phys. Rev. B 0163-1829 10.1103/PhysRevB.76.155207 76, 155207 (2007).
10. Based on measurements of thermal boundary resistance Rth between the sample and the temperature controlled base bath of our sample mount arrangement and the heat capacity of the samples Cp, we estimate the thermal relaxation time to the base bath τth ∼ Rth Cp to be 100 ms, which is an order of magnitude less than the observed electron phonon relaxation time τe-ph (see inset of Fig.).