Evidence of photoinduced charge transfer in C60/GaAs(1 0 0) bilayers by pump-probe measurements

Chemical Physics Letters

Volumn 466, Issue 1-3, 2008, Pages 65-67

  Sessi, P ^a   Brambilla, A ^a   Finazzi, M ^a   Duo L ^a   Cabanillas Gonzalez, J ^b   Egelhaaf, H J ^b   Lanzani, G ^b   Ciccacci, F ^a  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRON TRANSITIONS; GALLIUM ALLOYS; ION EXCHANGE; LEAD ALLOYS; PHOTOBLEACHING; PUMPS;

BI LAYERS; ELECTRON TRANSFERS; ENERGY LEVELS; HYBRID INTERFACES; INJECTION BARRIERS; NEUTRAL MOLECULES; PHOTOINDUCED CHARGE TRANSFERS; PHOTOINDUCED ELECTRON TRANSFERS; PROBE MEASUREMENTS; PUMP-PROBE SPECTROSCOPIES; SELECTIVE EXCITATIONS; SEMICONDUCTOR HETEROSTRUCTURES; ULTRA FASTS;

SEMICONDUCTING GALLIUM;

EID: 55549149042     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2008.10.027     Document Type: Article

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